Subject Repository
Electrical Engineering Mcqs
Showing 341 – 360 of 3,699 verified multiple choice questions with answers and explanations.
Q342NTS / FPSC / PPSC
The barrier voltage at a pn junction for germanium is about________________?
Q343NTS / FPSC / PPSC
The random motion of holes and free electrons due to thermal agitation is called______________?
Q344NTS / FPSC / PPSC
A hole and electron in close proximity would tend to________________?
Q345NTS / FPSC / PPSC
The battery connections required to forward bias a pn junction are_________________?
Q346NTS / FPSC / PPSC
In the depletion region of a pn junction, there is a shortage of_________________?
Q348NTS / FPSC / PPSC
In an intrinsic semiconductor, the number of free electrons_____________?
Q349NTS / FPSC / PPSC
When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on_________________?
Q350NTS / FPSC / PPSC
The leakage current in a pn junction is of the order of________________?
Q351NTS / FPSC / PPSC
The leakage current across a pn junction is due to________________?
Q352NTS / FPSC / PPSC
With forward bias to a pn junction , the width of depletion layer__________________?
Q353NTS / FPSC / PPSC
At room temperature, an intrinsic semiconductor has_______________?
Q354NTS / FPSC / PPSC
At room temperature, an intrinsic silicon crystal acts approximately as_______________?
Q355NTS / FPSC / PPSC
A forward biased pn junction diode has a resistance of the order of_____________?
Q356NTS / FPSC / PPSC
In a semiconductor, current conduction is due to________________?
Q357NTS / FPSC / PPSC
The impurity level in an extrinsic semiconductor is about_______________of pure semiconductor ?
Q358NTS / FPSC / PPSC
The resistivity of pure germanium under standard conditions is about_______________?
Q359NTS / FPSC / PPSC